EFFECT OF HIGH D.C. DENSITY STRESSING ON PRE-EXISTING VOIDS IN THIN GOLD-FILMS

被引:15
作者
LLOYD, JR
NAKAHARA, S
机构
[1] STEVENS INST TECHNOL,HOBOKEN,NJ 07030
[2] BELL TEL LABS INC,MURRAY HILL,NJ 07974
关键词
D O I
10.1016/0040-6090(79)90555-8
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The structure of evaporated thin gold films subjected to high d.c. density stressing (approximately 2 × 106 A cm-2 for 1000 h) was studied using a transmission electron microscope. The growth of small voids (less than 50 Å in size) pre-existing in the as-deposited gold films was examined after the films had been subjected to the d.c. stressing. The possible role of these pre-existing voids in electromigration-induced damage of thin film conductors is discussed. © 1979.
引用
收藏
页码:163 / 169
页数:7
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