ELECTROMIGRATION AND CREVICE FORMATION IN THIN METALLIC FILMS

被引：37

作者：

BLECH, IA

机构：

来源：

THIN SOLID FILMS | 1972年 / 13卷 / 01期

关键词：

D O I：

10.1016/0040-6090(72)90164-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：117 / &

相关论文

共 36 条

[1] AGRAWALA BN, 1970, J APPL PHYS, V41, P3954
[2] COATING, MECHANICAL CONSTRAINTS, AND PRESSURE EFFECTS ON ELECTROMIGRATION
AINSLIE, NG
WELLS, OC
DHEURLE, FM
[J]. APPLIED PHYSICS LETTERS, 1972, 20 (04) : 173 - &
[3] REDUCTION OF ELECTROMIGRATION IN ALUMINUM FILMS BY COPPER DOPING
AMES, I
DHEURLE, FM
HORSTMANN, RE
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (04) : 461 - +
[4] ANSTEAD RJ, 1969, IEEE T ELECTRON DEVI, VED16, P381
[5] ELECTROMIGRATION DAMAGE IN ALUMINUM FILM CONDUCTORS
ATTARDO, MJ
ROSENBERG, R
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (06) : 2381 - +
[6] SURFACE TOPOLOGY CHANGES DURING ELECTROMIGRATION IN METALLIC THIN FILM STRIPES
BERENBAUM, L
ROSENBERG, R
[J]. THIN SOLID FILMS, 1969, 4 (03) : 187 - +
[7] BERENBAUM L, 1971, 9 P ANN IEEE REL PHY
[8] SUPERIOR ALUMINUM FOR INTERCONNECTIONS OF INTEGRATED CIRCUITS
BHATT, HJ
[J]. APPLIED PHYSICS LETTERS, 1971, 19 (02) : 30 - &
[9] BLACK JR, 1969, IEEE T ELECTRON DEVI, VED16, P338
[10] ELECTROMIGRATION-INDUCED FAILURES IN, AND MICROSTRUCTURE AND RESISTIVITY OF, SPUTTERED GOLD FILMS
BLAIR, JC
GHATE, PB
FULLER, CR
HAYWOOD, CT
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (02) : 307 - &

← 1 2 3 4 →