INFLUENCE OF PLASMA DEPOSITION ON STRUCTURAL AND ELECTRONIC-PROPERTIES OF A-GE-H

被引：51

作者：

KARG, FH ^{[1
]}

BOHM, H ^{[1
]}

PIERZ, K ^{[1
]}

机构：

[1] UNIV MARBURG,FACHBEREICH PHYS,W-3550 MARBURG,GERMANY

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1989年 / 114卷

关键词：

D O I：

10.1016/0022-3093(89)90622-4

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：477 / 479

页数：3

共 7 条

[1] SPATIAL PROFILES OF REACTIVE INTERMEDIATES IN RF SILANE DISCHARGES [J].

MATARAS, D ;

CAVADIAS, S ;

RAPAKOULIAS, D .

JOURNAL OF APPLIED PHYSICS, 1989, 66 (01) :119-124

[2] PREFERENTIAL ATTACHMENT OF H IN AMORPHOUS HYDROGENATED BINARY SEMICONDUCTORS AND CONSEQUENT INFERIOR REDUCTION OF PSEUDOGAP STATE DENSITY [J].

PAUL, W ;

PAUL, DK ;

VONROEDERN, B ;

BLAKE, J ;

OGUZ, S .

PHYSICAL REVIEW LETTERS, 1981, 46 (15) :1016-1020

[3] OPTICAL AND ELECTRONIC-PROPERTIES OF PLASMA DEPOSITED A-GE-H [J].

PAYSON, JS ;

ROSS, RC .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 :579-582

[4] CORRELATION BETWEEN DEFECT DENSITY AND FERMI-LEVEL POSITION IN A-SI-H [J].

PIERZ, K ;

FUHS, W ;

MELL, H .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1989, 114 :651-653

[5] PLASMA PHASE POLYMERIZATION REACTIONS IN THE DEPOSITION OF GLOW-DISCHARGE DEPOSITED A-GE-H ALLOY-FILMS [J].

ROSS, RC ;

CHAO, SS ;

TYLER, JE ;

CZUBATYJ, W ;

LUCOVSKY, G .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03) :958-961

[6]

SHUMANICH A, 1983, J NONCRYST SOL, V59, P249

[7]

VEPREK S, 1988, MATER RES SOC S P, V118, P3

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