PROCESS MODELING OF INTEGRATED-CIRCUIT DEVICE TECHNOLOGY

[51] PARRILLO LC, 1977, DEC IEEE INT EL DEV, pA265

[52] PENUMALLI BR, 1981, ISSCC, P212

[53] PLUMMER JD, 1981, 4TH INT S SIL MAT SC

[54] MODEL FOR DOPANT INCORPORATION INTO GROWING SILICON EPITAXIAL-FILMS .1. THEORY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (04) : 644 - 652

[55] MODEL FOR DOPANT INCORPORATION INTO GROWING SILICON EPITAXIAL-FILMS .2. COMPARISON OF THEORY AND EXPERIMENT [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (04) : 653 - 660

[56] REIF R, UNPUBLISHED

[57] RUNYAN WR, 1965, SILICON SEMICONDUCTO, pCH7

[58] SIMULATION OF DOPING PROCESSES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1484 - 1492

[59] LARGE-SIGNAL ANALYSIS OF A SILICON READ DIODE OSCILLATOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (01) : 64 - +

[60] SCHARZ SA, 1981, J ELECTROCHEM SOC, V128

[51] PARRILLO LC, 1977, DEC IEEE INT EL DEV, pA265

[52] PENUMALLI BR, 1981, ISSCC, P212

[53] PLUMMER JD, 1981, 4TH INT S SIL MAT SC

[54] MODEL FOR DOPANT INCORPORATION INTO GROWING SILICON EPITAXIAL-FILMS .1. THEORY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (04) : 644 - 652

[55] MODEL FOR DOPANT INCORPORATION INTO GROWING SILICON EPITAXIAL-FILMS .2. COMPARISON OF THEORY AND EXPERIMENT [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (04) : 653 - 660

[56] REIF R, UNPUBLISHED

[57] RUNYAN WR, 1965, SILICON SEMICONDUCTO, pCH7

[58] SIMULATION OF DOPING PROCESSES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1484 - 1492

[59] LARGE-SIGNAL ANALYSIS OF A SILICON READ DIODE OSCILLATOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (01) : 64 - +

[60] SCHARZ SA, 1981, J ELECTROCHEM SOC, V128