PROCESS MODELING OF INTEGRATED-CIRCUIT DEVICE TECHNOLOGY

[31] HU SM, 1981, 1980 P MAT RES SOC M

[32] ON REDISTRIBUTION OF BORON IN DIFFUSED LAYER DURING THERMAL OXIDATION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (12) : 1577 - &

[33] KENNEDY DP, 1981, 2ND INT C NUM AN SEM

[34] KHALILY E, 1979, MAY EL SOC SPRING M

[35] IMPURITY REDISTRIBUTION DURING SILICON EPITAXIAL-GROWTH AND SEMICONDUCTOR-DEVICE PROCESSING [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (04) : 563 - 571

[36] REDISTRIBUTION OF BORON DURING THERMAL-OXIDATION OF SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (11) : 2001 - 2007

[37] MODELING AND MEASUREMENT OF SURFACE IMPURITY PROFILES OF LATERALLY DIFFUSED REGIONS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1978, 13 (04) : 455 - 461

[38] LEE HG, 1979, IEEE INT ELECTRON DE

[39] LEE HG, 1980, G2018 STANF EL LAB T

[40] LATERAL EFFECT OF OXIDATION ON BORON-DIFFUSION IN (100) SILICON [J]. APPLIED PHYSICS LETTERS, 1979, 35 (10) : 799 - 801

[31] HU SM, 1981, 1980 P MAT RES SOC M

[32] ON REDISTRIBUTION OF BORON IN DIFFUSED LAYER DURING THERMAL OXIDATION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (12) : 1577 - &

[33] KENNEDY DP, 1981, 2ND INT C NUM AN SEM

[34] KHALILY E, 1979, MAY EL SOC SPRING M

[35] IMPURITY REDISTRIBUTION DURING SILICON EPITAXIAL-GROWTH AND SEMICONDUCTOR-DEVICE PROCESSING [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (04) : 563 - 571

[36] REDISTRIBUTION OF BORON DURING THERMAL-OXIDATION OF SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (11) : 2001 - 2007

[37] MODELING AND MEASUREMENT OF SURFACE IMPURITY PROFILES OF LATERALLY DIFFUSED REGIONS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1978, 13 (04) : 455 - 461

[38] LEE HG, 1979, IEEE INT ELECTRON DE

[39] LEE HG, 1980, G2018 STANF EL LAB T

[40] LATERAL EFFECT OF OXIDATION ON BORON-DIFFUSION IN (100) SILICON [J]. APPLIED PHYSICS LETTERS, 1979, 35 (10) : 799 - 801