GROWTH AND ETCHING OF GERMANIUM FILMS BY CHEMICAL VAPOR-DEPOSITION IN A GECL4-H2 GAS SYSTEM

被引：13

作者：

ISHII, H

TAKAHASHI, Y

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1988年 / 135卷 / 06期

关键词：

D O I：

10.1149/1.2096049

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1539 / 1543

页数：5

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