A NEW GENERAL QUANTUM TRANSPORT MODEL

A new universal quantum transport model is presented for discussion. It represents the specimen conductance as an e2/h value modified by quantum numbers referring to the limiting length value le = 18.2 nm, which is characteristic for the two-dimensional electron gas. This value is derived from the reformulated Bohr postulate in which a quasi mass me = α2mo assigned to the coulomb energy unit is used to represent the electron mass. This reformulation permits the definition of the fine-structure constant α only in the standard form for QED. It will also be shown that the electron density 3.0×1015 m-2 represents a boundary between localization and current conductivity. The plausibility of this model is verified on the basis of various data obtained from Si MOSFETs and (Al,Ga)As/GaAs heterostructures. Its general applicability is confirmed by a suitable interpretation of the spectacular dependencies of the 2-dimensional electron gas on the magnetic field and temperature. In addition, the dimensional independence of the magnetoresistance at high magnetic fields, observed on Si MOSFETs, is shown here for the first time to be a significant property of the 2-dimensional electron gas and is interpreted successfully on the basis of our transport model. © 1990.