CONTACT ELECTRIFICATION ON THIN SILICON-OXIDE IN VACUUM

被引:11
作者
TSUYUGUCHI, T [1 ]
UCHIHASHI, T [1 ]
OKUSAKO, T [1 ]
SUGAWARA, Y [1 ]
MORITA, S [1 ]
YAMANISHI, Y [1 ]
OASA, T [1 ]
机构
[1] SUMITOMO MET IND LTD, ADV TECHNOL RES LABS, AMAGASAKI, HYOGO 660, JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1994年 / 33卷 / 7B期
关键词
CONTACT ELECTRIFICATION; ATOMIC FORCE MICROSCOPE; SILICON OXIDE; ELECTROSTATIC FORCE; ADSORBED WATER LAYER; AIR; VACUUM; SURFACE DIFFUSION; BULK DIFFUSION;
D O I
10.1143/JJAP.33.L1046
中图分类号
O59 [应用物理学];
学科分类号
摘要
We investigated the microscopic dissipation of contact electrified charges on a thin SiO2 film in vacuum where a thin layer of water may be adsorbed on the surface using an atomic force microscope (AFM). Charges with narrower spatial distributions were deposited in smaller amounts in vacuum than in air. Moreover, the deposited charge areas in vacuum showed no broadening with time after contact electrification. These demonstrate that the rapid surface diffusion of the charges in air may be caused by a water layer adsorbed on the insulator surfaces.
引用
收藏
页码:L1046 / L1048
页数:3
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