PROXIMITY GETTERING OF AU TO ION-BEAM-INDUCED DEFECTS IN SILICON

被引:30
作者
WONGLEUNG, J [1 ]
WILLIAMS, JS [1 ]
ELLIMAN, RG [1 ]
NYGREN, E [1 ]
EAGLESHAM, DJ [1 ]
JACOBSON, DC [1 ]
POATE, JM [1 ]
机构
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
关键词
D O I
10.1016/0168-583X(94)00494-3
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Rutherford backscattering and transmission electron microscopy have been used to analyse Au implanted Si (100) samples containing various types of implantation-induced disorder both before and after annealing. Gettering and precipitation phenomena are observed indicating complex diffusion behaviour and Au-defect interactions. For samples containing a subsurface band of internal cavities, almost 100% of implanted Au is gettered to such cavities when annealed at 850 degrees C for 1 h.
引用
收藏
页码:253 / 256
页数:4
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