LATTICE LOCATION BY CHANNELING ANGULAR-DISTRIBUTIONS - BI IMPLANTED IN SI

[21] FELDMAN LC, 1966, THESIS RUTGERS U

[22] Komaki K., 1970, PHYS STATUS SOLIDI, V2, P875

[23] Lindhard J., 1965, K DAN VIDENSK SELSK, V34, P14

[24] MAYER JW, 1972, SEMICONDUCTORS, P137

[25] MERZ JL, 1971, 2 P INT C ION IMPL S, P182

[26] MEASUREMENTS AND CALCULATIONS OF CRITICAL ANGLES FOR PLANAR CHANNELING [J]. PHYSICAL REVIEW, 1969, 186 (02): : 267 - &

[27] CHANNELING STUDIES IN DIAMOND-TYPE LATTICES [J]. PHYSICAL REVIEW, 1969, 180 (03): : 873 - +

[28] BEAM EFFECTS IN ANALYSIS OF AS-DOPED SILICON BY CHANNELING MEASUREMENTS [J]. APPLIED PHYSICS LETTERS, 1972, 20 (07) : 237 - &

[29] CRITICAL ANGLES OF SB AND BI IMPLANTED SI [J]. PHYSICS LETTERS A, 1971, A 36 (02) : 81 - &

[30] SIGURD D, TO BE PUBLISHED

[21] FELDMAN LC, 1966, THESIS RUTGERS U

[22] Komaki K., 1970, PHYS STATUS SOLIDI, V2, P875

[23] Lindhard J., 1965, K DAN VIDENSK SELSK, V34, P14

[24] MAYER JW, 1972, SEMICONDUCTORS, P137

[25] MERZ JL, 1971, 2 P INT C ION IMPL S, P182

[26] MEASUREMENTS AND CALCULATIONS OF CRITICAL ANGLES FOR PLANAR CHANNELING [J]. PHYSICAL REVIEW, 1969, 186 (02): : 267 - &

[27] CHANNELING STUDIES IN DIAMOND-TYPE LATTICES [J]. PHYSICAL REVIEW, 1969, 180 (03): : 873 - +

[28] BEAM EFFECTS IN ANALYSIS OF AS-DOPED SILICON BY CHANNELING MEASUREMENTS [J]. APPLIED PHYSICS LETTERS, 1972, 20 (07) : 237 - &

[29] CRITICAL ANGLES OF SB AND BI IMPLANTED SI [J]. PHYSICS LETTERS A, 1971, A 36 (02) : 81 - &

[30] SIGURD D, TO BE PUBLISHED