BEAM EFFECTS IN ANALYSIS OF AS-DOPED SILICON BY CHANNELING MEASUREMENTS

被引：24

作者：

RIMINI, E

HASKELL, J

MAYER, JW

机构：

来源：

APPLIED PHYSICS LETTERS | 1972年 / 20卷 / 07期

关键词：

D O I：

10.1063/1.1654126

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：237 / &

共 10 条

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[6]

FLADDA G, 1969, RADIATION EFFECTS, V1, P243

[7] OBSERVATIONS OF ARSENIC ATOMS IN SILICON CRYSTALS BY USE OF HELIUM ION SCATTERING [J].

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[8]

Mayer J. W., 1970, ION IMPLANTATION SEM

[9] ARSENIC CLUSTERING IN SILICON [J].

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[10]

ZIEGLER JM, UNPUBLISHED

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