CHARACTERIZATION OF NANOCRYSTALLITES IN POROUS P-TYPE 6H-SIC

被引：80

作者：

SHOR, JS

BEMIS, L

KURTZ, AD

GRIMBERG, I

WEISS, BZ

MACMILLIAN, MF

CHOYKE, WJ

机构：

[1] TECHNION ISRAEL INST TECHNOL,HAIFA,ISRAEL

[2] UNIV PITTSBURGH,PITTSBURGH,PA 15260

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 07期

关键词：

D O I：

10.1063/1.357352

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the formation of porous p-type 6H-SiC. The existence of uniformly dispersed pores was confirmed by transmission electron microscopy, with interpore spacings in the range of 1-10 nm. The porous film as a whole is a single crystal. Luminescence peaks above the normal band gap of 6H-SiC have been observed in the porous layer, but were not distinguished in the bulk SiC substrate. Quantum confinement is discussed as a possible mechanism for the luminescence effects.

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页码：4045 / 4049

页数：5

相关论文

共 25 条

[1] AN EXPERIMENTAL AND THEORETICAL-STUDY OF THE FORMATION AND MICROSTRUCTURE OF POROUS SILICON [J].

BEALE, MIJ ;

BENJAMIN, JD ;

UREN, MJ ;

CHEW, NG ;

CULLIS, AG .

JOURNAL OF CRYSTAL GROWTH, 1985, 73 (03) :622-636

[2] THE ORIGIN OF VISIBLE LUMINESCENCE FROM POROUS SILICON - A NEW INTERPRETATION [J].

BRANDT, MS ;

FUCHS, HD ;

STUTZMANN, M ;

WEBER, J ;

CARDONA, M .

SOLID STATE COMMUNICATIONS, 1992, 81 (04) :307-312

[3] SILICON-CARBIDE UV PHOTODIODES [J].

BROWN, DM ;

DOWNEY, ET ;

GHEZZO, M ;

KRETCHMER, JW ;

SAIA, RJ ;

LIU, YS ;

EDMOND, JA ;

GATI, G ;

PIMBLEY, JM ;

SCHNEIDER, WE .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (02) :325-333

[4] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].

CANHAM, LT .

APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048

[5]

DELNES JL, 1977, Patent No. 4028149

[6] BLUE LEDS, UV PHOTODIODES AND HIGH-TEMPERATURE RECTIFIERS IN 6H-SIC [J].

EDMOND, JA ;

KONG, HS ;

CARTER, CH .

PHYSICA B-CONDENSED MATTER, 1993, 185 (1-4) :453-460

[7] PROPERTIES OF SILICON-ELECTROLYTE JUNCTIONS AND THEIR APPLICATION TO SILICON CHARACTERIZATION [J].

FOLL, H .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1991, 53 (01) :8-19

[8]

KOCH F, 1983, SILICON BASED OPTOEL, V298, P319

[9] POROUS SILICON FORMATION - A QUANTUM WIRE EFFECT [J].

LEHMANN, V ;

GOSELE, U .

APPLIED PHYSICS LETTERS, 1991, 58 (08) :856-858

[10] OPTICAL-PROPERTIES OF POROUS SILICON [J].

LOCKWOOD, DJ ;

AERS, GC ;

ALLARD, LB ;

BRYSKIEWICZ, B ;

CHARBONNEAU, S ;

HOUGHTON, DC ;

MCCAFFREY, JP ;

WANG, A .

CANADIAN JOURNAL OF PHYSICS, 1992, 70 (10-11) :1184-1193