GROWTH AND MAGNETIC CHARACTERIZATION OF SINGLE-CRYSTAL NI FILMS ON ZNSE(001)

被引：14

作者：

JONKER, BT

KREBS, JJ

PRINZ, GA

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 10期

关键词：

D O I：

10.1063/1.342364

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5340 / 5342

页数：3

共 16 条

[11] USE OF MAGNETIC-MATERIALS IN MICROWAVE AND MILLIMETER-WAVE MONOLITHIC INTEGRATED-CIRCUITS [J].

SCHLOEMANN, E .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (08) :4112-4112

[12] EPITAXIAL FE FILMS ON GAAS FOR HYBRID SEMICONDUCTOR MAGNETIC MEMORIES [J].

SCHLOEMANN, E ;

TUSTISON, R ;

WEISSMAN, J ;

VANHOOK, HJ ;

VARITIMOS, T .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (08) :3140-3142

[13] THIN-FILM PERMANENT-MAGNET REQUIREMENTS FOR MAGNETIC DEVICES IN MMIC [J].

STANCIL, DD .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (08) :4111-4111

[14] EPITAXIAL FE FILMS ON (100)GAAS SUBSTRATES BY ION-BEAM SPUTTERING [J].

TUSTISON, RW ;

VARITIMOS, T ;

VANHOOK, J ;

SCHLOEMANN, EF .

APPLIED PHYSICS LETTERS, 1987, 51 (04) :285-287

[15] INTERFACE CHEMISTRY OF METAL-GAAS SCHOTTKY-BARRIER CONTACTS [J].

WALDROP, JR ;

GRANT, RW .

APPLIED PHYSICS LETTERS, 1979, 34 (10) :630-632

[16] EPITAXY, OVERLAYER GROWTH, AND SURFACE SEGREGATION FOR CO/GAAS(110) AND CO/GAAS(100)-C(8X2) [J].

XU, F ;

JOYCE, JJ ;

RUCKMAN, MW ;

CHEN, HW ;

BOSCHERINI, F ;

HILL, DM ;

CHAMBERS, SA ;

WEAVER, JH .

PHYSICAL REVIEW B, 1987, 35 (05) :2375-2384

← 1 2 →