DLTS CAPACITANCE STUDIES ON DEEP LEVEL CENTERS IN VPE GAP-N

被引:13
作者
BREITENSTEIN, O
RHEINLANDER, B
BINDEMANN, R
机构
[1] Sektion Physik, Karl-Marx-Universität Leipzig, Arbeitsgemeinschaft A
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1979年 / 51卷 / 01期
关键词
D O I
10.1002/pssa.2210510108
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
From DLTS‐, photo‐DLTS, and photocapacitance spectra on green emitting VPE GaP: N LED's the activation energies, the concentrations, and capture cross sections of four acceptor and four donor traps are determined. The concentration of the donor Ei = Ec − 0.46 eV behaves as the square of the net donor concentration. The most pronounced acceptor level Ei = Ev + 0.75 eV seems to have two states with capture cross sections σ∞ = 6.8 × 10−16 and 1.7 × 10−12 cm2 and respective capture activation energies of E∞ = +0.10 and +0.17 eV. Only the former correlates with the EL efficiency. Copyright © 1979 WILEY‐VCH Verlag GmbH & Co. KGaA
引用
收藏
页码:79 / 86
页数:8
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