TEMPERATURE EFFECT ON ION-IRRADIATION-INDUCED GRAIN-GROWTH IN CU THIN-FILMS

被引：51

作者：

LIU, JC ^{[1
]}

LI, J ^{[1
]}

MAYER, JW ^{[1
]}

机构：

[1] CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 67卷 / 05期

关键词：

D O I：

10.1063/1.345530

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The average grain size in Ar+-irradiated Cu films at room temperature increases with ion dose, following a relationship of d̄3.3-d̄3.30 =Kφ. For Ar + and Xe++ irradiations, the grain growth kinetics are independent of temperature at T≤-60 °C and increase with temperature in the range from -60 to 102 °C. The activation energy of the temperature-dependent contribution to grain boundary migration is about 0.14 eV, and the growth rate is independent of ion flux, suggesting that the ion-irradiation-induced grain growth is associated with the thermal spike diffusion.

引用

页码：2354 / 2358

页数：5

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