DONOR-RELATED DEEP-LEVEL IN BULK GASB

被引：28

作者：

DUTTA, PS ^{[1
]}

RAO, KSRK ^{[1
]}

SANGUNNI, KS ^{[1
]}

BHAT, HL ^{[1
]}

KUMAR, V ^{[1
]}

机构：

[1] SOLID STATE PHYS,DELHI 110054,INDIA

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 11期

关键词：

D O I：

10.1063/1.112975

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Deep level transient spectroscopy (DLTS) and thermally stimulated capacitance (TSCAP) studies on bulk grown tellurium- selenium-, and sulphur-doped gallium antimonide reveal the presence of deep level intrinsic, of the dopant species. The trap densities in Te- and Se-doped samples were found to be at least two orders of magnitude lower than the shallow donor concentration. Interestingly, the DLTS spectrum of S:GaSb exhibits DX-like nature with the trap concentration comparable to that of shallow donor concentration. However, the Te and Se related levels do not exhibit DX-like nature. The DLTS and TSCAP results are in good agreement with each other.

引用

页码：1412 / 1414

页数：3

共 13 条

[1]

DUTTA PS, 1992, P C EMERGING OPTOELE

[2] DX-LIKE CENTER IN BULK GASBS [J].