DEEP DONORS IN GASB GROWN BY MOLECULAR-BEAM EPITAXY

被引：46

作者：

POOLE, I ^{[1
]}

LEE, ME ^{[1
]}

CLEVERLEY, IR ^{[1
]}

PEAKER, AR ^{[1
]}

SINGER, KE ^{[1
]}

机构：

[1] UNIV MANCHESTER,INST SCI & TECHNOL,CTR ELECTR MAT,MANCHESTER M60 1QD,LANCS,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 16期

关键词：

D O I：

10.1063/1.104075

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A deep state possessing similar properties to those reported for DX centers in the AlGaAs system has been observed at atmospheric pressure in GaSb moderately doped with sulfur. The first detailed deep level transient spectroscopy study of this material has revealed a large energy barrier to electron capture and a correspondingly small capture cross section for this deep level. The deep level activity of selenium- and tellurium-doped GaSb has also been investigated.

引用

页码：1645 / 1647

页数：3

共 11 条

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