SULFUR DOPING BEHAVIOR OF GALLIUM ANTIMONIDE GROWN BY MOLECULAR-BEAM EPITAXY

被引：19

作者：

POOLE, I

LEE, ME

SINGER, KE

FROST, JEF

KERR, TM

WOOD, CEC

ANDREWS, DA

ROTHWELL, WJM

DAVIES, GJ

机构：

[1] UNIV MANCHESTER,INST SCI & TECHNOL,CTR ELECTR MAT,MANCHESTER M60 1QD,LANCS,ENGLAND

[2] GE RES LTD,HIRST RES CTR,WEMBLEY HA9 7PP,MIDDX,ENGLAND

[3] BRITISH TELECOM RES LABS,IPSWICH IP5 7RE,SUFFOLK,ENGLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 02期

关键词：

D O I：

10.1063/1.340251

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：395 / 399

页数：5

共 15 条

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