STIMULATED-EMISSION FROM ULTRATHIN INAS/GAAS QUANTUM-WELL HETEROSTRUCTURES GROWN BY ATOMIC LAYER EPITAXY

被引：28

作者：

TISCHLER, MA ^{[1
]}

ANDERSON, NG ^{[1
]}

KOLBAS, RM ^{[1
]}

BEDAIR, SM ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT ELECT & COMP ENGN,RALEIGH,NC 27695

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 18期

关键词：

D O I：

10.1063/1.97879

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1266 / 1268

页数：3

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[7] ULTRATHIN INAS/GAAS SINGLE QUANTUM-WELL STRUCTURES GROWN BY ATOMIC LAYER EPITAXY
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