COMPARATIVE-STUDY OF LASER AND THERMAL ANNEALING OF BORON-IMPLANTED SILICON

被引：60

作者：

NARAYAN, J

YOUNG, RT

WHITE, CW

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1978年 / 49卷 / 07期

关键词：

D O I：

10.1063/1.325398

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3912 / 3917

页数：6

共 21 条

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[12]

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[14]

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[15]

PICRAUX ST, 1971, RADIAT EFF, V11, P1179

[16]

SHTYRKOV EI, 1975, SOV PHYS SEMICOND+, V9, P1309

[17]

Tamura M., 1971, ION IMPLANTATION SEM, P96

[18]

WANG JHS, UNPUBLISHED

[19] SHRINKAGE OF ROD-SHAPED DEFECTS IN BORON-ION-IMPLANTED SILICON [J].

WU, WK ;

WASHBURN, J .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (09) :3742-3746

[20] LASER ANNEALING OF BORON-IMPLANTED SILICON [J].

YOUNG, RT ;

WHITE, CW ;

CLARK, GJ ;

NARAYAN, J ;

CHRISTIE, WH ;

MURAKAMI, M ;

KING, PW ;

KRAMER, SD .

APPLIED PHYSICS LETTERS, 1978, 32 (03) :139-141

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