ELECTRON-TRANSPORT IN AN ALSB/INAS/GASB TUNNEL EMITTER HOT-ELECTRON TRANSISTOR

被引：9

作者：

CHIU, TH ^{[1
]}

LEVI, AFJ ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 18期

关键词：

D O I：

10.1063/1.102163

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1891 / 1893

页数：3

共 9 条

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YOKOYAMA, N .

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[2]

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[3] ROOM-TEMPERATURE OPERATION OF HOT-ELECTRON TRANSISTORS [J].

LEVI, AFJ ;

CHIU, TH .

APPLIED PHYSICS LETTERS, 1987, 51 (13) :984-986

[4]

MADELUNG O, 1982, LANDOLTBORNSTEIN TAB, V3

[5] ROOM-TEMPERATURE CW-OPERATION OF GASB/ALGASB MQW LASER-DIODES GROWN BY MBE [J].

OHMORI, Y ;

SUZUKI, Y ;

OKAMOTO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1985, 24 (08) :L657-L660

[6] HIGH-GAIN PSEUDOMORPHIC INGAAS BASE BALLISTIC HOT-ELECTRON DEVICE [J].

SEO, K ;

HEIBLUM, M ;

KNOEDLER, CM ;

OH, JE ;

PAMULAPATI, J ;

BHATTACHARYA, P .

IEEE ELECTRON DEVICE LETTERS, 1989, 10 (02) :73-75

[7] BALLISTIC ELECTRON TRANSMISSION THROUGH INTERFACES [J].

STILES, MD ;

HAMANN, DR .

PHYSICAL REVIEW B, 1988, 38 (03) :2021-2037

[8] SURFACE RECONSTRUCTION AND MORPHOLOGY OF INAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

SUGIYAMA, K .

JOURNAL OF CRYSTAL GROWTH, 1986, 75 (03) :435-440

[9]

TUTTLE G, 1989, SPR P MRS M SAN DIEG

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