EPITAXIAL-GROWTH KINETICS ON PATTERNED SUBSTRATES

被引：20

作者：

HAIDER, N ^{[1
]}

WILBY, MR ^{[1
]}

VVEDENSKY, DD ^{[1
]}

机构：

[1] UNIV LONDON UNIV COLL,DEPT ELECT & ELECTR ENGN,LONDON WC1E 7JE,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 24期

关键词：

D O I：

10.1063/1.109153

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The temperature dependence of the growth kinetics on V-grooved substrates is studied by computer simulation, with attention focused upon the evolution of the morphology. We find a distribution of growth rates on GaAs(001) at high temperatures due to surface diffusion of adatoms from one facet to the other. However, at low temperatures, where surface migration processes are less important, growth on these substrates proceeds in a shape-preserving manner. Comparison with scanning microprobe reflection high-energy electron-diffraction intensity oscillations on GaAs(001) near (111) surfaces shows that our results are in qualitative agreement with observed behavior.

引用

页码：3108 / 3110

页数：3

共 14 条

[1] OPTIMAL SURFACE AND GROWTH FRONT OF III-V SEMICONDUCTORS IN MOLECULAR-BEAM EPITAXY - A STUDY OF KINETIC PROCESSES VIA REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION SPECULAR BEAM INTENSITY MEASUREMENTS ON GAAS(100) [J].

CHEN, P ;

KIM, JY ;

MADHUKAR, A ;

CHO, NM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04) :890-895

[2] ORIGIN OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING MOLECULAR-BEAM EPITAXY - A COMPUTATIONAL MODELING APPROACH [J].

CLARKE, S ;

VVEDENSKY, DD .

PHYSICAL REVIEW LETTERS, 1987, 58 (21) :2235-2238

[3] DISTRIBUTIONS OF GROWTH-RATES ON PATTERNED SURFACES MEASURED BY SCANNING MICROPROBE REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION [J].

HATA, M ;

ISU, T ;

WATANABE, A ;

KATAYAMA, Y .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (04) :692-696

[4] SURFACE-DIFFUSION LENGTH OBSERVED BY INSITU SCANNING MICROPROBE REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION [J].

HATA, M ;

WATANABE, A ;

ISU, T .

JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) :83-87

[5] MOLECULAR-BEAM EPITAXY OF GAAS/ALGAAS SUPERLATTICE HETEROSTRUCTURES ON NONPLANAR SUBSTRATES [J].

KAPON, E ;

TAMARGO, MC ;

HWANG, DM .

APPLIED PHYSICS LETTERS, 1987, 50 (06) :347-349

[6] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OSCILLATIONS FROM VICINAL SURFACES - A NEW APPROACH TO SURFACE-DIFFUSION MEASUREMENTS [J].

NEAVE, JH ;

DOBSON, PJ ;

JOYCE, BA ;

ZHANG, J .

APPLIED PHYSICS LETTERS, 1985, 47 (02) :100-102

[7] THEORY OF EPITAXIAL-GROWTH ONTO NONPLANAR SUBSTRATES [J].

OZDEMIR, M ;

ZANGWILL, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (04) :684-690

[8] MORPHOLOGICAL STABILITY OF FACET GROWTH ON NONPLANAR SUBSTRATES [J].

RATSCH, C ;

ZANGWILL, A .

APPLIED PHYSICS LETTERS, 1991, 58 (04) :403-405

[9] EQUILIBRIUM CRYSTAL SHAPES FOR LATTICE MODELS WITH NEAREST-NEIGHBOR AND NEXT-NEAREST-NEIGHBOR INTERACTIONS [J].

ROTTMAN, C ;

WORTIS, M .

PHYSICAL REVIEW B, 1984, 29 (01) :328-339

[10] STEP-DENSITY VARIATIONS AND REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING EPITAXIAL-GROWTH ON VICINAL GAAS(001) [J].

SHITARA, T ;

VVEDENSKY, DD ;

WILBY, MR ;

ZHANG, J ;

NEAVE, JH ;

JOYCE, BA .

PHYSICAL REVIEW B, 1992, 46 (11) :6815-6824

← 1 2 →