ELECTRON-MOBILITY IN HYDROGENATED AMORPHOUS-SILICON UNDER SINGLE AND DOUBLE INJECTION

被引：14

作者：

SILVER, M

WINBORNE, G

ADLER, D

CANNELLA, V

机构：

[1] MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139

[2] OVON IMAGING SYST INC,TROY,MI 48084

来源：

关键词：

D O I：

10.1063/1.98005

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：983 / 985

页数：3

共 9 条

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[2] Lampert M.A., 1970, CURRENT INJECTION SO
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MARSHALL, JM
LECOMBER, PG
SPEAR, WE
[J]. SOLID STATE COMMUNICATIONS, 1985, 54 (01) : 11 - 14
[4] THE PRE-EXPONENTIAL FACTOR IN THE CONDUCTIVITY OF AMORPHOUS-SILICON
MOTT, NF
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1985, 51 (01): : 19 - 25
[5] TRANSPORT AND THE ELECTRONIC-STRUCTURE OF HYDROGENATED AMORPHOUS-SILICON
SILVER, M
ADLER, D
SHAW, MP
CANNELLA, V
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1986, 53 (04): : L89 - L95
[6] STUDY OF THE ELECTRONIC-STRUCTURE OF AMORPHOUS-SILICON USING REVERSE-RECOVERY TECHNIQUES
SILVER, M
GILES, NC
SNOW, E
SHAW, MP
CANNELLA, V
ADLER, D
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (10) : 935 - 937
[7] SNOW E, THESIS U N CAROLINA
[8] THE STUDY OF TRANSPORT AND RELATED PROPERTIES OF AMORPHOUS-SILICON BY TRANSIENT EXPERIMENTS
SPEAR, WE
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 1 - 14
[9] TIEDJE T, 1984, SEMICONDUCT SEMIMET, V21, P207