DIFFUSION OF ALUMINUM IN ZNSE-ZNTE SYSTEM

被引：12

作者：

AVEN, M

KREIGER, EL

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1970年 / 41卷 / 05期

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D O I：

10.1063/1.1659144

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1930 / &

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[1] MECHANISM OF CHARGE TRANSPORT AND LIGHT EMISSION IN ZNSEXTE1-X P-N JUNCTIONS
AVEN, M
GARWACKI, W
[J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (05) : 2302 - &
[2] GROWTH OF ZNSE-ZNTE SOLID SOLUTIONS IN TE2 ATMOSPHERE
AVEN, M
HALL, RB
PRENER, JS
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (08) : 846 - &
[3] P-N JUNCTIONS AS ARTIFICIAL DIFFUSION BARRIERS FOR NATIVE DEFECTS
AVEN, M
HALL, RB
GARWACKI, W
[J]. APPLIED PHYSICS LETTERS, 1968, 13 (09) : 292 - &
[4] SYNTHESIS + TRANSPORT PROPERTIES OF ZNSE-ZNTE MIXED CRYSTALS IN N- + P-TYPE FORM ( CARRIER CONCENTRATION + MOBILITY AS FUNCTION OF TEMPERATURE MINIMUM RESISTANCE - 1OMEGA-CM E )
AVEN, M
GARWACKI, W
[J]. APPLIED PHYSICS LETTERS, 1964, 5 (08) : 160 - &
[5] DIFFUSION OF ELECTRICALLY AND OPTICALLY ACTIVE DEFECT CENTERS IN 2-6 COMPOUNDS
AVEN, M
HALSTED, RE
[J]. PHYSICAL REVIEW, 1965, 137 (1A): : A228 - &
[6] AVEN M, 1961, APPL PHYS LETT, V2, P51
[7] THE JUNCTION DEPTH OF CONCENTRATION-DEPENDENT DIFFUSION - ZINC IN III-V COMPOUNDS
CHANG, LL
[J]. SOLID-STATE ELECTRONICS, 1964, 7 (12) : 853 - 859
[8] CRANK J, 1956, MATHEMATICS DIFFUSIO, P19
[9] CRANK J, 1956, MATH DIFFUSION, P18
[10] DUNLAP WC, 1954, PHYS REV, V94, P1530