A NOVEL LOW RESISTIVE METAL-INSULATOR-SEMICONDUCTOR (MIS) INVERSION LAYER SOLAR-CELL STRUCTURE

被引：7

作者：

CHATTOPADHYAY, P ^{[1
]}

机构：

[1] INDIAN INST SCI,DEPT PHYS,BANGALORE 560012,KARNATAKA,INDIA

来源：

SOLID-STATE ELECTRONICS | 1988年 / 31卷 / 11期

关键词：

D O I：

10.1016/0038-1101(88)90012-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1641 / 1643

页数：3

共 18 条

[1] 8 PERCENT EFFICIENT LAYERED SCHOTTKY-BARRIER SOLAR CELL [J].

ANDERSON, WA ;

DELAHOY, AE ;

MILANO, RA .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (09) :3913-3915

[2] ON THE CONDITION OF INVERSION IN AN MIS TUNNEL STRUCTURE [J].

ASH, MC ;

DAW, AN .

SOLID-STATE ELECTRONICS, 1986, 29 (09) :991-994

[3] EFFECT OF SURFACE-STATES ON THE BARRIER HEIGHT IN A MIS DIODE IN THE PRESENCE OF INVERSION [J].

CHATTOPADHYAY, P ;

DAW, AN .

INTERNATIONAL JOURNAL OF ELECTRONICS, 1985, 58 (05) :775-779

[4]

CHATTOPADHYAY P, 1985, PHOTOVOLTAIC MATERIA, P344

[5]

CHATTOPADHYAY P, IN PRESS SOLID ST EL

[6]

DAW AN, SOLID ST ELECTRON, V27, P1057

[7]

Green M. A., 1980, Fourteenth IEEE Photovoltaic Specialists Conference 1980, P684

[8] SILICON PHOTO-VOLTAIC CELLS [J].

HALL, RN .

SOLID-STATE ELECTRONICS, 1981, 24 (07) :595-616

[9] AN ANALYSIS OF THE COLLECTION MECHANISMS IN INVERSION LAYER SOLAR-CELLS [J].

HEASELL, EL .

SOLID-STATE ELECTRONICS, 1984, 27 (05) :475-483

[10]

HEAVENS OS, 1955, OPTICAL PROPERTIES T, P167

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