ON THE CONDITION OF INVERSION IN AN MIS TUNNEL STRUCTURE

被引：3

作者：

ASH, MC

DAW, AN

机构：

[1] Institute of Radio Physics and Electronics, 92, Acharya Prafulla Chandra Road, Calcutta-700009, India

来源：

SOLID-STATE ELECTRONICS | 1986年 / 29卷 / 09期

关键词：

CONDITION OF INVERSION - ENERGY-BAND DIAGRAM - FERMI POTENTIAL - MIS TUNNEL STRUCTURE - SURFACE POTENTIAL;

D O I：

10.1016/0038-1101(86)90025-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：991 / 994

页数：4

共 10 条

[1] STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES [J].

CARD, HC ;

RHODERICK, EH .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) :1589-+

[2] EFFECT OF INVERSION ON BARRIER HEIGHT IN A METAL-SIO2-SI TUNNEL SYSTEM [J].

DAW, AN ;

CHATTOPADHYAY, P .

SOLID-STATE ELECTRONICS, 1984, 27 (12) :1057-1060

[3] CHARACTERISTICS OF SURFACE-STATE CHARGE (QSS) OF THERMALLY OXIDIZED SILICON [J].

DEAL, BE ;

SKLAR, M ;

GROVE, AS ;

SNOW, EH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (03) :266-+

[4]

HALEN PV, 1978, IEEE T ELECTRON DEV, V25, P507

[5] A COMPARISON OF MAJORITY-CARRIER AND MINORITY-CARRIER SILICON MIS SOLAR-CELLS [J].

NG, KK ;

CARD, HC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (04) :716-724

[6] CURRENT MECHANISM OF TUNNEL MIS SOLAR-CELLS [J].

NIELSEN, OM .

IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1980, 127 (06) :301-307

[7]

PULFREY DL, 1976, IEEE T ELECTRON DEV, V23, P587, DOI 10.1109/T-ED.1976.18458

[8] MINORITY-CARRIER MIS SOLAR-CELL [J].

PULFREY, DL .

SOLID-STATE ELECTRONICS, 1977, 20 (05) :455-457

[9] MINORITY-CARRIER MIS TUNNEL-DIODES AND THEIR APPLICATION TO ELECTRON-VOLTAIC AND PHOTO-VOLTAIC ENERGY-CONVERSION .2. EXPERIMENT [J].

SHEWCHUN, J ;

GREEN, MA ;

KING, FD .

SOLID-STATE ELECTRONICS, 1974, 17 (06) :563-572

[10]

SZE SM, 1983, PHYSICS SEMICONDUCTO, P437

← 1 →