GROWTH OF TIC FILMS BY PULSED LASER EVAPORATION (PLE) AND CHARACTERIZATION BY XPS AND AES

被引：12

作者：

RIST, O ^{[1
]}

MURRAY, PT ^{[1
]}

机构：

[1] UNIV DAYTON,RES INST,DAYTON,OH 45469

来源：

FRESENIUS JOURNAL OF ANALYTICAL CHEMISTRY | 1991年 / 341卷 / 5-6期

关键词：

D O I：

10.1007/BF00321937

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

Thin films of TiC with a thickness of some 100 nm have been grown on Si(100) substrates by Pulsed Laser Evaporation (PLE). Advantages of PLE in comparison with more conventional growth methods e.g. PVD or CVD are reported. The feasibility of growing stoichiometric thin films of TiC by PLE was investigated. These films produced have been analysed in situ by X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). XPS results and Auger sputter depth profiles indicate that the films grown between RT and 500-degrees-C are stoichiometric TiC. Film/substrate interdiffusion is observed at 600-degrees-C substrate temperature and higher.

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页码：360 / 364

页数：5

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