TIC AS A DIFFUSION BARRIER BETWEEN AL AND COSI2

被引：11

作者：

APPELBAUM, A

MURARKA, SP

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1986年 / 4卷 / 03期

关键词：

D O I：

10.1116/1.573861

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：637 / 640

页数：4

共 16 条

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[5]

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[7]

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[8]

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[9] DIFFUSION BARRIERS IN THIN-FILMS [J].

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[10] BEHAVIOR OF VARIOUS SILICON SCHOTTKY-BARRIER DIODES UNDER HEAT-TREATMENT [J].

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