LOW DIFFUSIVITY OF DOPANTS IN (111)A GAAS

被引：6

作者：

SHINODA, A

YAMAMOTO, T

INAI, M

TAKEBE, T

WATANABE, T

机构：

[1] ATR Optical and Radio Communications Research Laboratories, Seika-cho Soraku-gun Kyoto

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1993年 / 32卷 / 10A期

关键词：

(111)A GAAS; ACCEPTOR SI; EVAPORATION OF AS ATOMS; ARSENIC VACANCY; DIFFUSION OF DOPANTS;

D O I：

10.1143/JJAP.32.L1374

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate the evaporation of As atoms from the surface and the diffusion of Si and Be in delta-doped layers, for (111)A and (100) GaAs. As atoms on the (111)A surface do not easily evaporate compared with those on the (100) surface. The diffusion of dopants in (111)A GaAs is smaller than in(100) GaAs, independent of the presence of As vacancies. The diffusion in (100) GaAs, on the contrary, is enhanced by the presence of As vacancies.

引用

收藏

页码：L1374 / L1376

页数：3

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