SECONDARY-ION MASS-SPECTROMETRY STUDY OF THE MIGRATION OF SI IN PLANAR-DOPED GAAS AND AL0.25GA0.75AS

被引：46

作者：

LANZILLOTTO, AM ^{[1
]}

SANTOS, M ^{[1
]}

SHAYEGAN, M ^{[1
]}

机构：

[1] PRINCETON UNIV,DEPT ELECT ENGN,PRINCETON,NJ 08544

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 14期

关键词：

D O I：

10.1063/1.101582

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1445 / 1447

页数：3

共 26 条

[1] MIGRATION OF SI IN DELTA-DOPED GAAS
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HARRIS, JJ
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (06) : 612 - 615
[2] THEORY OF THE ATOMIC AND ELECTRONIC-STRUCTURE OF DX CENTERS IN GAAS AND ALXGA1-XAS ALLOYS
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CHANG, KJ
[J]. PHYSICAL REVIEW LETTERS, 1988, 61 (07) : 873 - 876
[3] QUANTUM SIZE EFFECT IN DELTA-DOPED ALGAAS HETEROSTRUCTURES
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02): : 599 - 602
[4] QUANTUM SIZE EFFECT IN MONOLAYER-DOPED HETEROSTRUCTURES
CUNNINGHAM, JE
TSANG, WT
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OWUSUSEKYERE, K
[J]. PHYSICAL REVIEW B, 1988, 37 (08): : 4317 - 4320
[5] GAAS STRUCTURES WITH ELECTRON-MOBILITY OF 5X10(6)CM2/VS
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[J]. APPLIED PHYSICS LETTERS, 1987, 50 (25) : 1826 - 1828
[6] GROWTH BY MOLECULAR-BEAM EPITAXY AND CHARACTERIZATION OF HIGH-PURITY GAAS AND ALGAAS
HEIBLUM, M
MENDEZ, EE
OSTERLING, L
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) : 6982 - 6988
[7] LEE H, 1985, I PHYS C SER, V74, P321
[8] SECONDARY ION QUADRUPOLE MASS-SPECTROMETER FOR DEPTH PROFILING-DESIGN AND PERFORMANCE EVALUATION
MAGEE, CW
HARRINGTON, WL
HONIG, RE
[J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1978, 49 (04) : 477 - 485
[9] DEPTH PROFILING BY SIMS DEPTH RESOLUTION, DYNAMIC-RANGE AND SENSITIVITY
MAGEE, CW
HONIG, RE
[J]. SURFACE AND INTERFACE ANALYSIS, 1982, 4 (02) : 35 - 41
[10] DELTA-(DELTA-) DOPING IN MBE-GROWN GAAS - CONCEPT AND DEVICE APPLICATION
PLOOG, K
[J]. JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 304 - 313

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