DOPANT DEPENDENCY OF FERMI LEVEL LOCATION IN HEAVILY DOPED SILICON

被引：6

作者：

TAO, TF

HSIA, Y

机构：

来源：

APPLIED PHYSICS LETTERS | 1968年 / 13卷 / 09期

关键词：

D O I：

10.1063/1.1652617

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：291 / +

页数：1

共 12 条

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