A GAAS MISFET USING AN MBE-GROWN CAF2 GATE INSULATOR LAYER

被引：30

作者：

WAHO, T

YANAGAWA, F

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 10期

关键词：

D O I：

10.1109/55.17840

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：548 / 549

页数：2

共 8 条

[1] EPITAXIAL RELATIONS IN LATTICE-MATCHED (CA,SR)F2 FILMS GROWN ON GAAS(111) AND GE(111) SUBSTRATES [J].

ISHIWARA, H ;

TSUTSUI, K ;

ASANO, T ;

FURUKAWA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (10) :L803-L805

[2] LARGE TRANSCONDUCTANCE N+-GE GATE ALGAAS/GAAS MISFET WITH THIN GATE INSULATOR [J].

MAEZAWA, K ;

MIZUTANI, T ;

ARAI, K ;

YANAGAWA, F .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (07) :454-456

[3] HIGH THRESHOLD VOLTAGE REPRODUCIBILITY FOR WSI/ALXGA1-XAS/GAAS MIS-LIKE HETEROSTRUCTURE FET [J].

MARUO, T ;

ARAI, K ;

YANAGAWA, F .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1986, 25 (06) :928-929

[4]

MIZUTANI T, 1987, IEDM, P603

[5] EPITAXIAL-GROWTH OF LATTICE-MATCHED CAXSR1-XF2 ON (100) AND (110) GAAS SUBSTRATES [J].

SISKOS, S ;

FONTAINE, C ;

MUNOZYAGUE, A .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (06) :1642-1646

[6]

WAHO T, 1987, J ELECTROCHEM SOC, V134, pC579

[7]

WILMSEN CW, 1985, PHYSICS CHEM 3 5 COM

[8] FERMI-LEVEL PINNING BY MISFIT DISLOCATIONS AT GAAS INTERFACES [J].

WOODALL, JM ;

PETTIT, GD ;

JACKSON, TN ;

LANZA, C ;

KAVANAGH, KL ;

MAYER, JW .

PHYSICAL REVIEW LETTERS, 1983, 51 (19) :1783-1786

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