HIGH THRESHOLD VOLTAGE REPRODUCIBILITY FOR WSI/ALXGA1-XAS/GAAS MIS-LIKE HETEROSTRUCTURE FET

被引：2

作者：

MARUO, T ^{[1
]}

ARAI, K ^{[1
]}

YANAGAWA, F ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, ATSUGI ELECT COMMUN LABS, ATSUGI, KANAGAWA 24301, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1986年 / 25卷 / 06期

关键词：

D O I：

10.1143/JJAP.25.928

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：928 / 929

页数：2

共 8 条

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