INHOMOGENEOUS LATTICE DISTORTION IN THE HETEROEPITAXY OF INAS ON GAAS

[1] BARRETT, 1966, STRUCTURE METALS, P155

[2] GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 436 - 440

[3] GROWTH BY MOLECULAR-BEAM EPITAXY AND CHARACTERIZATION OF INAS/GAAS STRAINED-LAYER SUPERLATTICES [J]. APPLIED PHYSICS LETTERS, 1985, 47 (10) : 1099 - 1101

[4] MOLECULAR-BEAM EPITAXIAL-GROWTH AND TRANSMISSION ELECTRON-MICROSCOPY STUDIES OF THIN GAAS/INAS(100) MULTIPLE QUANTUM WELL STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1985, 46 (10) : 983 - 985

[5] GRUNTHARNER FJ, 1986, 2ND INT C SUP MICR M

[6] EVIDENCE FOR PSEUDOMORPHIC GROWTH OF IRON ON COPPER [J]. PHILOSOPHICAL MAGAZINE, 1967, 15 (138): : 1097 - &

[7] ELASTIC STRAIN AND MISFIT DISLOCATION DENSITY IN SI0.92GE0.08 FILMS ON SILICON SUBSTRATES [J]. THIN SOLID FILMS, 1977, 44 (03) : 357 - 370

[8] X-RAY TOTAL-EXTERNAL-REFLECTION-BRAGG DIFFRACTION - STRUCTURAL STUDY OF THE GAAS-AL INTERFACE [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (11) : 6927 - 6933

[9] MATTHEWS JW, 1974, J CRYST GROWTH, V27, P118, DOI 10.1016/0022-0248(74)90424-2

[10] DEFECTS IN EPITAXIAL MULTILAYERS .3. PREPARATION OF ALMOST PERFECT MULTILAYERS [J]. JOURNAL OF CRYSTAL GROWTH, 1976, 32 (02) : 265 - 273

[1] BARRETT, 1966, STRUCTURE METALS, P155

[2] GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 436 - 440

[3] GROWTH BY MOLECULAR-BEAM EPITAXY AND CHARACTERIZATION OF INAS/GAAS STRAINED-LAYER SUPERLATTICES [J]. APPLIED PHYSICS LETTERS, 1985, 47 (10) : 1099 - 1101

[4] MOLECULAR-BEAM EPITAXIAL-GROWTH AND TRANSMISSION ELECTRON-MICROSCOPY STUDIES OF THIN GAAS/INAS(100) MULTIPLE QUANTUM WELL STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1985, 46 (10) : 983 - 985

[5] GRUNTHARNER FJ, 1986, 2ND INT C SUP MICR M

[6] EVIDENCE FOR PSEUDOMORPHIC GROWTH OF IRON ON COPPER [J]. PHILOSOPHICAL MAGAZINE, 1967, 15 (138): : 1097 - &

[7] ELASTIC STRAIN AND MISFIT DISLOCATION DENSITY IN SI0.92GE0.08 FILMS ON SILICON SUBSTRATES [J]. THIN SOLID FILMS, 1977, 44 (03) : 357 - 370

[8] X-RAY TOTAL-EXTERNAL-REFLECTION-BRAGG DIFFRACTION - STRUCTURAL STUDY OF THE GAAS-AL INTERFACE [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (11) : 6927 - 6933

[9] MATTHEWS JW, 1974, J CRYST GROWTH, V27, P118, DOI 10.1016/0022-0248(74)90424-2

[10] DEFECTS IN EPITAXIAL MULTILAYERS .3. PREPARATION OF ALMOST PERFECT MULTILAYERS [J]. JOURNAL OF CRYSTAL GROWTH, 1976, 32 (02) : 265 - 273