A STUDY OF GROUP-V DESORPTION FROM GAAS AND GAP BY REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION IN GAS-SOURCE MOLECULAR-BEAM EPITAXY

被引：13

作者：

LIANG, BW

TU, CW

机构：

[1] Department of Electrical and Computer Engineering, University of California at San Diego, San Diego

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 72卷 / 07期

关键词：

D O I：

10.1063/1.351532

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Desorption behaviors of arsenic on GaAs and phosphorus on GaP surfaces have been studied by the specular-beam intensity change of reflection high-energy electron diffraction when the group-V cracker shutter is closed in gas-source molecular beam epitaxy. We obtained an activation energy of 58 kcal/mol for arsenic desorption from GaAs. Compared with arsenic on GaAs, phosphorus on GaP has a large desorption rate constant, and the activation energy of phosphorus desorption is 43 kcal/mol. These activation energies are comparable to the heats of vaporation of As2 and P2.

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页码：2806 / 2809

页数：4

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