STRAINED GAINASP SINGLE-QUANTUM-WELL LASERS GROWN WITH TERTIARYBUTYLARSINE AND TERTIARYBUTYLPHOSPHINE

被引：11

作者：

HOLMES, AL ^{[1
]}

HEIMBUCH, ME ^{[1
]}

DENBAARS, SP ^{[1
]}

机构：

[1] UNIV CALIF SANTA BARBARA,DEPT MAT,SANTA BARBARA,CA 93016

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 25期

关键词：

D O I：

10.1063/1.110158

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on low threshold current densities in GaInAsP single-quantum-well (SQW) lasers grown with the metalorganic column-V precursors, tertiarybutylarsine and tertiarybutylphosphine, instead of the conventional compressed gas sources, arsine and phosphine. Threshold current densities of 121 A/cm2 for a 1.6% compressive strained SQW laser and 249 A/cm2 for an unstrained SQW laser have been measured and are among the lowest values seen in this material system.

引用

页码：3417 / 3419

页数：3

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