THE FORMATION OF THE GD-SI(111)7 X 7 INTERFACE AND THE ENHANCED OXIDATION OF SI - A STUDY WITH AES, EELS AND LEED

被引：10

作者：

HENLE, WA

RAMSEY, MG

NETZER, FP

机构：

[1] Institut für Physikalische Chemie, Universität Innsbruck

来源：

VACUUM | 1990年 / 41卷 / 4-6期

关键词：

D O I：

10.1016/0042-207X(90)93792-H

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The evolution of the Gd-Si(111)7×7 interface as a function of Gd coverage, temperature and exposure to oxygen has been investigated using Auger electron spectroscopy (AES), electron energy loss spectroscopy (EELS), and low-energy electron diffraction (LEED). Theelectronic excitations of the interface are interpreted in terms of interface plasmon modes and Gd derived one-electron excitations. Both AES and EELS confirm high reactivity at the interface. Enhanced oxidation of Si at room temperature up to several orders of magnitude is observed for the reacted interfaces, but the ordered Gd disilicide-type phases, which form upon annealing of the interface, are much less reactive. © 1990.

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页码：814 / 817

页数：4

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