TIME OF FLIGHT MEASUREMENT OF DIFFERENTIAL NEGATIVE MOBILITY IN CDTE

[1] ALBERIGI A, TO BE PUBLISHED

[2] INTERVALLEY TRANSFER MECHANISM OF NEGATIVE RESISTIVITY IN BULK SEMICONDUCTORS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1965, 86 (554P): : 1205 - &

[3] GUNN EFFECT IN POLAR SEMICONDUCTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) : 79 - +

[4] GUNN EFFECT IN CDTE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (09) : 547 - +

[5] MAYER JW, 1968, SEMICONDUCTOR DETECT, pCH5

[6] GUNN EFFECT IN N-CDTE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (09) : 617 - +

[7] INFLUENCE OF IONIZED IMPURITY SCATTERING ON GUNN EFFECT AND IMPACT IONIZATION IN CDTE [J]. APPLIED PHYSICS LETTERS, 1968, 12 (03) : 81 - +

[8] TRANSPORT PROPERTIES OF GAAS [J]. PHYSICAL REVIEW, 1968, 174 (03): : 921 - +

[9] TRANSIENT CURRENTS IN SEMI-INSULATING CDTE CHARACTERISTIC OF DEEP TRAPS [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (06) : 2818 - +

[1] ALBERIGI A, TO BE PUBLISHED

[2] INTERVALLEY TRANSFER MECHANISM OF NEGATIVE RESISTIVITY IN BULK SEMICONDUCTORS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1965, 86 (554P): : 1205 - &

[3] GUNN EFFECT IN POLAR SEMICONDUCTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) : 79 - +

[4] GUNN EFFECT IN CDTE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (09) : 547 - +

[5] MAYER JW, 1968, SEMICONDUCTOR DETECT, pCH5

[6] GUNN EFFECT IN N-CDTE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (09) : 617 - +

[7] INFLUENCE OF IONIZED IMPURITY SCATTERING ON GUNN EFFECT AND IMPACT IONIZATION IN CDTE [J]. APPLIED PHYSICS LETTERS, 1968, 12 (03) : 81 - +

[8] TRANSPORT PROPERTIES OF GAAS [J]. PHYSICAL REVIEW, 1968, 174 (03): : 921 - +

[9] TRANSIENT CURRENTS IN SEMI-INSULATING CDTE CHARACTERISTIC OF DEEP TRAPS [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (06) : 2818 - +