GUNN EFFECT IN N-CDTE

被引：9

作者：

OLIVER, MR

FOYT, AG

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1967年 / ED14卷 / 09期

关键词：

D O I：

10.1109/T-ED.1967.16018

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：617 / +

页数：1

共 10 条

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[6]

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LUDWIG, GW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (09) :547-+

[8] POSSIBILITY OF NEGATIVE RESISTANCE EFFECTS IN SEMICONDUCTORS [J].

RIDLEY, BK ;

WATKINS, TB .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1961, 78 (500) :293-&

[9] SPECIFIC NEGATIVE RESISTANCE IN SOLIDS [J].

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[10] ELECTRICAL PROPERTIES OF N-TYPE CDTE [J].

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LORENZ, MR .

PHYSICAL REVIEW, 1963, 129 (06) :2471-&

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