SELECTIVE GROWTH OF SIGE STRUCTURES IN THE SUB 100 NM RANGE USING LOW-PRESSURE VAPOR-PHASE EPITAXY

被引：3

作者：

SCHMIDT, G

TUZINSKI, R

HEIME, K

机构：

[1] Institut für Halbleitertechnik, RWTH Aachen, D-52056 Aachen

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 154卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(95)00179-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In recent times many efforts have been made to produce SiGe-nanostructures in order to achieve new optical properties. Most of them use direct etching of the SiGe layer thus inducing defects at the sidewalls. Selective growth allows the production of nanostructures that do not experience any etching process. The SiGe structure is totally covered by silicon. Using a new two layer resist system structures with dimensions down to 70 nm were grown.

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页码：189 / 192

页数：4

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