SELECTIVE GROWTH OF SIGE NANOSTRUCTURES BY LOW-PRESSURE VPE

For the investigation of optical effects in low dimensional silicon germanium heterostructures it is necesary to transfer patterns into silicon germanium with a lateral scaling of less than 100 nm. We use electron beam lithography and a special resist system to transfer the pattern into an SiO2 mask. By selective low pressure vapour phase epitaxy small silicon germanium structures can then be grown. By this method surface damage resulting from subsequent etching can be avoided and an immediate coverage with silicon is possible. The process and first results are presented in this paper.