EXCIMER LASER DIRECT ETCHING OF GAAS

[1] DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV [J]. PHYSICAL REVIEW B, 1983, 27 (02) : 985 - 1009

[2] SEMICONDUCTING AND OTHER MAJOR PROPERTIES OF GALLIUM-ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : R123 - R181

[3] PHOTON-ASSISTED DRY ETCHING OF GAAS [J]. APPLIED PHYSICS LETTERS, 1984, 45 (04) : 475 - 477

[4] EXCIMER LASER PROJECTION ETCHING OF GAAS [J]. APPLIED PHYSICS LETTERS, 1986, 49 (13) : 803 - 805

[5] DRY, LASER-ASSISTED RAPID HBR ETCHING OF GAAS [J]. APPLIED PHYSICS LETTERS, 1985, 47 (03) : 310 - 312

[6] DULEY WW, 1976, CO2 LASERS EFFECTS A, P139

[7] Herzberg G., 1950, SPECTRA DIATOMIC MOL

[8] ALGAAS/GAAS DISTRIBUTED FEEDBACK LASERS WITH 1ST-ORDER GRATING FABRICATED BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1987, 51 (02) : 63 - 65

[9] LASER SPUTTERING .3. THE MECHANISM OF THE SPUTTERING OF METALS LOW-ENERGY DENSITIES [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR) : 755 - 763

[10] EXCIMER LASER ETCHING OF AL METAL-FILMS IN CHLORINE ENVIRONMENTS [J]. APPLIED PHYSICS LETTERS, 1985, 46 (10) : 1006 - 1008

[1] DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV [J]. PHYSICAL REVIEW B, 1983, 27 (02) : 985 - 1009

[2] SEMICONDUCTING AND OTHER MAJOR PROPERTIES OF GALLIUM-ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : R123 - R181

[3] PHOTON-ASSISTED DRY ETCHING OF GAAS [J]. APPLIED PHYSICS LETTERS, 1984, 45 (04) : 475 - 477

[4] EXCIMER LASER PROJECTION ETCHING OF GAAS [J]. APPLIED PHYSICS LETTERS, 1986, 49 (13) : 803 - 805

[5] DRY, LASER-ASSISTED RAPID HBR ETCHING OF GAAS [J]. APPLIED PHYSICS LETTERS, 1985, 47 (03) : 310 - 312

[6] DULEY WW, 1976, CO2 LASERS EFFECTS A, P139

[7] Herzberg G., 1950, SPECTRA DIATOMIC MOL

[8] ALGAAS/GAAS DISTRIBUTED FEEDBACK LASERS WITH 1ST-ORDER GRATING FABRICATED BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1987, 51 (02) : 63 - 65

[9] LASER SPUTTERING .3. THE MECHANISM OF THE SPUTTERING OF METALS LOW-ENERGY DENSITIES [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR) : 755 - 763

[10] EXCIMER LASER ETCHING OF AL METAL-FILMS IN CHLORINE ENVIRONMENTS [J]. APPLIED PHYSICS LETTERS, 1985, 46 (10) : 1006 - 1008