HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPE STUDIES OF AN AL-GE-NI OHMIC CONTACT TO GAAS

被引：8

作者：

GRAHAM, RJ ^{[1
]}

ERKAYA, HH ^{[1
]}

EDWARDS, JL ^{[1
]}

ROEDEL, RJ ^{[1
]}

机构：

[1] ARIZONA STATE UNIV,DEPT ELECT & COMP ENGN,TEMPE,AZ 85287

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 05期

关键词：

D O I：

10.1116/1.584203

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1502 / 1505

页数：4

共 13 条

[1] OHMIC CONTACTS TO N-GAAS USING IN/PD METALLIZATION
ALLEN, LH
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[J]. APPLIED PHYSICS LETTERS, 1987, 51 (05) : 326 - 327
[2] DEVELOPMENT OF OHMIC CONTACTS FOR GAAS DEVICES USING EPITAXIAL GE FILMS
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DAVEY, JE
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1978, 13 (04) : 430 - 435
[3] An X-ray analysis of the nickel-aluminium system
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[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1937, 159 (A896) : 0056 - 0072
[4] METAL-SEMICONDUCTOR CONTACTS FOR GAAS BULK EFFECT DEVICES
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GUNN, JB
STAPLES, JL
[J]. SOLID-STATE ELECTRONICS, 1967, 10 (05) : 381 - +
[5] GRAHAM R, UNPUB
[6] PRELIMINARY STUDIES OF AL-GE-NI OHMIC CONTACTS TO P-TYPE AND N-TYPE GAAS
GRAHAM, RJ
ERKAYA, HH
ROEDEL, RJ
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (01) : 266 - 267
[7] ELECTRON-MICROSCOPE STUDIES OF AN ALLOYED AU/NI-AU-GE OHMIC CONTACT TO GAAS
KUAN, TS
BATSON, PE
JACKSON, TN
RUPPRECHT, H
WILKIE, EL
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) : 6952 - 6957
[8] ALLOYING BEHAVIOR OF NI-AU-GE FILMS ON GAAS
OGAWA, M
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 406 - 412
[9] OHMIC CONTACTS TO III-V-COMPOUND SEMICONDUCTORS - A REVIEW OF FABRICATION TECHNIQUES
PIOTROWSKA, A
GUIVARCH, A
PELOUS, G
[J]. SOLID-STATE ELECTRONICS, 1983, 26 (03) : 179 - &
[10] TRANSMISSION-ELECTRON MICROSCOPE STUDIES OF AU-NI-GE BASED OHMIC CONTACTS TO GAAS-ALGAAS MODFET DEVICE
RAI, AK
EZIS, A
MCCORMICK, AW
PETFORDLONG, AK
LANGER, DW
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (09) : 4682 - 4688

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