PHYSICAL AND ELECTRICAL-PROPERTIES OF MEMORY QUALITY PECVD SILICON OXYNITRIDE

被引:21
作者
SHAMS, QA [1 ]
BROWN, WD [1 ]
机构
[1] UNIV ARKANSAS,DEPT ELECT ENGN,FAYETTEVILLE,AR 72701
关键词
D O I
10.1149/1.2086640
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Memory quality silicon oxynitride has been deposited using plasma-enhanced chemical vapor deposition (PECVD). The effects of oxygen on the physical properties of the films were studied using ellipsometry, ultraviolet spectrophotometry, and Fourier transform infrared spectroscopy. Silicon oxynitride films of various compositions were deposited by changing the amount of nitrous oxide in the reactant gas stream from 5 to 85 sccm for a constant value of NH3/SiH4 = 0.8. The refractive index of the films decreases from 1.8 to 1.55 and the deposition rate increases as nitrous oxide flow rate increases. The Si-H bond concentration increases slightly for nitrous oxide flows of 5 to 9 sccm and then decreases for higher flows. The optical bandedge varies monotonically from 3.2 eV for silicon nitride (no N2O) to 5.25 eV for a nitrous oxide flow of 85 sccm. Total bonded hydrogen decreases with increasing nitrous oxide flow due to a reduction in Si-H bond concentration. Multiple bonding configurations are observed for silicon and hydrogen at the higher nitrous oxide flows. A correlation is observed between Si-H bond concentration and memory window size. Although the addition of oxygen to silicon nitride enhances endurance performance, high nitrous oxide flows increase the charge decay rate and thus degrade the memory performance. © 1990, The Electrochemical Society, Inc. All rights reserved.
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页码:1244 / 1247
页数:4
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