ION PROJECTOR WAFER EXPOSURE RESULTS AT 5 X ION-OPTICAL REDUCTION OBTAINED WITH NICKEL AND SILICON STENCIL MASKS

A detailed study of the resolution performance of an advanced research type ''Alpha Ion Projector'' with 5X ion-optical reduction has been performed. One part of the study was done with a nickel open stencil test mask with an active field of 40 mmX40 mm with smallest line pattern openings of almost-equal-to 0.7 mum width (2.0 mum periodicity). The other part was done with a silicon stencil test mask (120 mm diam, 2.5 mum thickness, 60 mmX60 mm design field) with smallest line patterns of almost-equal-to 0.4 mum width (1.0 mum periodicity). The Alpha Ion Projector exposures were performed in positive (PMMA: OEBR-1000) and negative (SNR-M4, RAY-PN) resist materials with subsequent wet chemical development. The 0.15-mum resolution was obtained in the case of wafer exposures with the nickel stencil mask within the 8 mmX8 mm exposure field whereas in the case of wafer exposures with the silicon stencil mask sub-0.1-mum resolution could be achieved near the center of the exposure field at 5.2X ion-optical reduction.