SELECTIVE ANNEALING UTILIZING SINGLE-PULSE EXCIMER-LASER IRRADIATION FOR SHORT-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

Excimer laser annealing (ELA) for metal-oxide-semiconductor (MOS) devices of less than a quarter micron was investigated. A new structure for the electrodes and new processing were developed to prevent deformation of the finely patterned electrodes during ELA. For a wavelength of 308 nm of the excimer laser, SiO2 films of 100 nM were deposited on the electrodes to reflect the laser light effectively. Fine metal-oxide-semiconductor field-effect transistors (MOSFETs) with shallow junction depth of 50 nm and fine patterned gate of 0.3 mum were realized and their characteristics were evaluated.