PRECISE CONTROL OF SHEET RESISTANCE IN BORON DOPING OF SILICON BY EXCIMER LASER IRRADIATION

被引：14

作者：

INUI, S

NII, T

MATSUMOTO, S

机构：

[1] Department of Electrical Engineering, Keio University, Hiyoshi

来源：

IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 12期

关键词：

D O I：

10.1109/55.116961

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In order to control the sheet resistance in boron doping of silicon by the excimer laser irradiation, two-step doping consisting of the deposition of boron films and the incorporation of dopant atoms is proposed. These processes are carried out in the same chamber successively. The precise control of the sheet resistance can be realized by this method and a very low sheet resistance can also be obtained by only the one pulse irradiation for the melting of silicon.

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页码：702 / 703

页数：2

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