HALF-MICROMETER-BASE LATERAL BIPOLAR-TRANSISTORS MADE IN THIN SILICON-ON-INSULATOR FILMS

被引:9
作者
COLINGE, JP
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D O I
10.1049/el:19860604
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:886 / 887
页数:2
相关论文
共 4 条
[1]   FABRICATION OF THIN SILICON-ON-INSULATOR FILMS USING LASER RECRYSTALLIZATION [J].
COLINGE, JP ;
HU, HK ;
PENG, S .
ELECTRONICS LETTERS, 1985, 21 (23) :1102-1103
[2]  
COLINGE JP, 1986, ELECTRON DEVICE LETT, V7, P279
[3]   SILICON-ON-INSULATOR BIPOLAR-TRANSISTORS [J].
RODDER, M ;
ANTONIADIS, DA .
IEEE ELECTRON DEVICE LETTERS, 1983, 4 (06) :193-195
[4]   FULLY ISOLATED LATERAL BIPOLAR-MOS TRANSISTORS FABRICATED IN ZONE-MELTING-RECRYSTALLIZED SI FILMS ON SIO2 [J].
TSAUR, BY ;
SILVERSMITH, DJ ;
FAN, JCC ;
MOUNTAIN, RW .
IEEE ELECTRON DEVICE LETTERS, 1983, 4 (08) :269-271