EXPLOSIVE CRYSTALLIZATION OF DILUTE AMORPHOUS SI-GE ALLOYS

被引：4

作者：

AYDINLI, A

BERTI, M

DRIGO, AV

LOTTI, R

MERLI, PG

机构：

[1] UNIV PADUA,CTR INTERUNIV STRUTTURA MAT,I-35100 PADUA,ITALY

[2] UNIV LECCE,DIPARTIMENTO SCI MAT,I-73100 LECCE,ITALY

[3] UNIV LECCE,CTR INTERUNIV STRUTTURA MAT,I-73100 LECCE,ITALY

[4] CNR,LAMEL,I-40126 BOLOGNA,ITALY

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 06期

关键词：

D O I：

10.1063/1.341505

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3301 / 3303

页数：3

共 13 条

[1]

AYDINLI A, 1987, IN PRESS AUG P NATO

[2] SPECIFIC HEAT AND HEAT OF CRYSTALLIZATION OF AMORPHOUS GERMANIUM [J].

CHEN, HS ;

TURNBULL, D .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (10) :4214-&

[3] CALORIMETRIC STUDIES OF CRYSTALLIZATION AND RELAXATION OF AMORPHOUS SI AND GE PREPARED BY ION-IMPLANTATION [J].

DONOVAN, EP ;

SPAEPEN, F ;

TURNBULL, D ;

POATE, JM ;

JACOBSON, DC .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) :1795-1804

[4] EXPLOSIVE CRYSTALLIZATION OF AMORPHOUS-GERMANIUM [J].

LEAMY, HJ ;

BROWN, WL ;

CELLER, GK ;

FOTI, G ;

GILMER, GH ;

FAN, JCC .

APPLIED PHYSICS LETTERS, 1981, 38 (03) :137-139

[5]

Lowndes D. H., 1987, Journal of Materials Research, V2, P648, DOI 10.1557/JMR.1987.0648

[6] PULSED LASER MELTING OF AMORPHOUS-SILICON LAYERS [J].

NARAYAN, J ;

WHITE, CW .

APPLIED PHYSICS LETTERS, 1984, 44 (01) :35-37

[7] EFFECTS OF AS IMPURITIES ON THE SOLIDIFICATION VELOCITY OF SI DURING PULSED LASER ANNEALING [J].

PEERCY, PS ;

THOMPSON, MO ;

TSAO, JY .

APPLIED PHYSICS LETTERS, 1985, 47 (03) :244-246

[8] STOPPING POWER VALUES OF BE, C, AL AND SI FOR HE-4 IONS [J].

SANTRY, DC ;

WERNER, RD .

NUCLEAR INSTRUMENTS & METHODS, 1980, 178 (2-3) :523-530

[9] RAPID SOLIDIFICATION STUDIES OF A MODEL ALLOY SYSTEM [J].

THOMPSON, MO ;

PEERCY, PS ;

TSAO, JY ;

AZIZ, MJ .

APPLIED PHYSICS LETTERS, 1986, 49 (10) :558-560

[10]

THOMPSON MO, 1985, MATE RES SOC S P, V51, P99

← 1 2 →