CONDUCTIVITY CHANGES IN NI FILMS ON SI(111) FOLLOWING COMPOUND FORMATION DURING ANNEALING

被引：15

作者：

SCHAD, R

JENTZSCH, F

HENZLER, M

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1992年 / 10卷 / 03期

关键词：

D O I：

10.1116/1.585882

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The sheet conductance of Ni films deposited onto clean Si(111) substrates has been measured during deposition and after stepwise annealing. Hall effect, surface composition, and surface order have also been monitored. The dependence of compound formation on film thickness and temperature has been studied. It is shown that each silicide has a characteristic bulk conductivity and that the influence of surface scattering is small even for very thin films (> 1 nm).

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页码：1177 / 1180

页数：4

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